型号:

BSC882N03MS G

RoHS:无铅 / 符合
制造商:Infineon Technologies描述:MOSFET N-CH 30V 100A TDSON-8
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
BSC882N03MS G PDF
标准包装 1
系列 OptiMOS™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 34V
电流 - 连续漏极(Id) @ 25° C 100A
开态Rds(最大)@ Id, Vgs @ 25° C 2.6 毫欧 @ 30A,10V
Id 时的 Vgs(th)(最大) 2V @ 250µA
闸电荷(Qg) @ Vgs 55nC @ 10V
输入电容 (Ciss) @ Vds 4300pF @ 15V
功率 - 最大 69W
安装类型 表面贴装
封装/外壳 8-PowerTDFN
供应商设备封装 PG-TDSON-8
包装 标准包装
其它名称 BSC882N03MS GDKR
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